Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures
نویسندگان
چکیده
منابع مشابه
Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating
Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an i...
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ژورنال
عنوان ژورنال: RSC Advances
سال: 2018
ISSN: 2046-2069
DOI: 10.1039/c8ra05797d