Characterization of the piezoresistance in highly doped p-type 3C-SiC at cryogenic temperatures

Piezoresistive effect in p-type 3C-SiC at high temperatures characterized using Joule heating

Cubic silicon carbide is a promising material for Micro Electro Mechanical Systems (MEMS) applications in harsh environ-ments and bioapplications thanks to its large band gap, chemical inertness, excellent corrosion tolerance and capability of growth on a Si substrate. This paper reports the piezoresistive effect of p-type single crystalline 3C-SiC characterized at high temperatures, using an i...

Piezoresistance behaviors of p-type 6H-SiC nanowires.

We reported, for the first time, the piezoresistance behaviors of single p-type 6H-SiC nanowires. The results suggest that present p-type 6H-SiC nanowires could be an excellent candidate for the fabrication of robust and reliable stress sensors.

Nanoscale characterization of electrical transport at metal/3C-SiC interfaces

In this work, the transport properties of metal/3C-SiC interfaces were monitored employing a nanoscale characterization approach in combination with conventional electrical measurements. In particular, using conductive atomic force microscopy allowed demonstrating that the stacking fault is the most pervasive, electrically active extended defect at 3C-SiC(111) surfaces, and it can be electrical...

Characterization of the Opa350 Operational Amplifier at Cryogenic Temperatures

As part of the development of EMIR, an infrared multiobject spectrograph for the Gran Telescopio de Canarias (GTC), the OPA350 operational amplifier is being successfully used at cryogenic temperatures (77K). The use of off-theshelf electronics (not specifically designed for cryogenics) is advantageous since it allows us to get signal amplification very close to the detector without the need of...

Piezoresistance in p-type silicon revisited